FQB65N06TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

yes

Series :

QFET®

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

65A

Rds On (Max) @ Id, Vgs :

16m Ω @ 32.5A, 10V

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain-source On Resistance-Max :

0.016Ohm

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

3.75W Ta 150W Tc

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2.41pF @ 25V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

260A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Number of Elements :

1

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

650 mJ

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2