FQB3P20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.4A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

150 mJ

Power Dissipation-Max :

3.13W Ta 52W Tc

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Pbfree Code :

yes

Terminal Finish :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

QFET®

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

2.8A

Pulsed Drain Current-Max (IDM) :

11.2A

Qualification Status :

COMMERCIAL

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant