FQB33N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Threshold Voltage :

2V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Height :

4.83mm

Factory Lead Time :

10 Weeks

Weight :

1.31247g

ECCN Code :

EAR99

Continuous Drain Current (ID) :

33A

Transistor Element Material :

SILICON

Power Dissipation :

3.75W

FET Type :

N-Channel

Turn-Off Delay Time :

70 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Resistance :

52mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

RoHS Status :

ROHS3 Compliant

Length :

10.67mm

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Series :

QFET®

Fall Time (Typ) :

120 ns

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Current Rating :

33A

Element Configuration :

Single

Width :

9.65mm

Case Connection :

DRAIN

Rise Time :

470ns

Pbfree Code :

yes

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

100V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Turn On Delay Time :

17 ns

Terminal Form :

Gull wing

Power Dissipation-Max :

3.75W Ta 127W Tc

Transistor Application :

SWITCHING

Published :

2000