FQB3N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

12.8A

Drain to Source Voltage (Vdss) :

300V

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.6A, 10V

Number of Elements :

1

Case Connection :

DRAIN

Surface Mount :

yes

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

FET Type :

N-Channel

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Number of Terminations :

2

Series :

QFET®

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

3.13W Ta 55W Tc

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

140 mJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

300V

Terminal Position :

Single

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

3.2A

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V