FQB33N10TM

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Mfr.Part #
FQB33N10TM
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 33A D2PAK
Stock
7,698
In Stock :
7,698

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
11 Weeks
Number of Terminations :
2
Gate to Source Voltage (Vgs) :
25V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 25V
Turn On Delay Time :
15 ns
Turn-Off Delay Time :
80 ns
Weight :
1.31247g
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
52m Ω @ 16.5A, 10V
Published :
2000
Qualification Status :
Not Qualified
Threshold Voltage :
4V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Current Rating :
33A
Vgs(th) (Max) @ Id :
4V @ 250µA
Rise Time :
195ns
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Vgs (Max) :
±25V
Case Connection :
DRAIN
Length :
10.67mm
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Height :
4.83mm
Drain to Source Breakdown Voltage :
100V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID) :
33A
Series :
QFET®
Terminal Form :
Gull wing
Power Dissipation :
3.75W
Width :
9.65mm
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
33A Tc
Operating Temperature :
-55°C~175°C TJ
Voltage - Rated DC :
100V
Power Dissipation-Max :
3.75W Ta 127W Tc
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Number of Elements :
1
Resistance :
52mOhm
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
110 ns
Number of Pins :
3
Contact Plating :
Tin
Mount :
Surface Mount
Reach Compliance Code :
not_compliant
Datasheets
FQB33N10TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FQB33N10TM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, FQB33N10TM pinout, FQB33N10TM datasheet PDF, FQB33N10TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQB33N10TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQB33N10TM


N-Channel Tape & Reel (TR) 52m Ω @ 16.5A, 10V ±25V 1500pF @ 25V 51nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB33N10TM Description


A 100V N-channel QFET? MOSFET made with planar stripe and DMOS technology is called the FQB33N10TM. The on-state resistance of these advanced MOSFETs has been specifically reduced, and they also offer enhanced switching performance and great avalanche energy strength. It is appropriate for applications requiring variable switching power, DC motor control, audio amplifiers, and switched mode power supplies.



FQB33N10TM Features


  • Low gate charge (typical 38nC)

  • Low Crss (typical 62pF)

  • 100% avalanche tested

  • ±25V gate source voltage

  • 40°C/W thermal resistance, junction to ambient

  • 1.18°C/W thermal resistance, junction to case



FQB33N10TM Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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