FQB33N10TM
- Mfr.Part #
- FQB33N10TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 33A D2PAK
- Stock
- 7,698
- In Stock :
- 7,698
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 11 Weeks
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 25V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Turn On Delay Time :
- 15 ns
- Turn-Off Delay Time :
- 80 ns
- Weight :
- 1.31247g
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 16.5A, 10V
- Published :
- 2000
- Qualification Status :
- Not Qualified
- Threshold Voltage :
- 4V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Current Rating :
- 33A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 195ns
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±25V
- Case Connection :
- DRAIN
- Length :
- 10.67mm
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 4.83mm
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 33A
- Series :
- QFET®
- Terminal Form :
- Gull wing
- Power Dissipation :
- 3.75W
- Width :
- 9.65mm
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 100V
- Power Dissipation-Max :
- 3.75W Ta 127W Tc
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Number of Elements :
- 1
- Resistance :
- 52mOhm
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 110 ns
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Datasheets
- FQB33N10TM

N-Channel Tape & Reel (TR) 52m Ω @ 16.5A, 10V ±25V 1500pF @ 25V 51nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB33N10TM Description
A 100V N-channel QFET? MOSFET made with planar stripe and DMOS technology is called the FQB33N10TM. The on-state resistance of these advanced MOSFETs has been specifically reduced, and they also offer enhanced switching performance and great avalanche energy strength. It is appropriate for applications requiring variable switching power, DC motor control, audio amplifiers, and switched mode power supplies.
FQB33N10TM Features
-
Low gate charge (typical 38nC)
-
Low Crss (typical 62pF)
-
100% avalanche tested
-
±25V gate source voltage
-
40°C/W thermal resistance, junction to ambient
-
1.18°C/W thermal resistance, junction to case
FQB33N10TM Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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