FQB34N20LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

520ns

Number of Terminations :

2

Dual Supply Voltage :

200V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

3.13W Ta 180W Tc

Avalanche Energy Rating (Eas) :

640 mJ

Mounting Type :

Surface Mount

Series :

QFET®

Resistance :

75mOhm

Fall Time (Typ) :

370 ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

31A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

75m Ω @ 15.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Turn On Delay Time :

45 ns

ECCN Code :

EAR99

Length :

10.67mm

Terminal Form :

Gull wing

Published :

2000

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Turn-Off Delay Time :

170 ns

Packaging :

Cut Tape (CT)

Element Configuration :

Single

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Width :

9.65mm

Terminal Finish :

Tin (Sn)

Threshold Voltage :

2V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Radiation Hardening :

No

Vgs (Max) :

±20V

Voltage - Rated DC :

200V

Power Dissipation :

3.13W

Number of Pins :

2

Nominal Vgs :

2 V

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 5V

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Weight :

1.31247g

Height :

4.83mm

Feedback Cap-Max (Crss) :

67 pF

FET Type :

N-Channel

JESD-609 Code :

e3

Continuous Drain Current (ID) :

31A