FQB3N60CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

12A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Terminal Position :

Single

Vgs (Max) :

±30V

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

3A

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Number of Terminations :

2

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

150 mJ

Power Dissipation-Max :

75W Tc

DS Breakdown Voltage-Min :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA