FQA38N30
- Mfr.Part #
- FQA38N30
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- 38.4A, 300V, N-CHANNEL, MOSFET
- Stock
- 22,933
- In Stock :
- 22,933
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 300V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- QFET®
- Number of Terminations :
- 3
- Length :
- 15.8mm
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Current Rating :
- 38.4A
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Rise Time :
- 430ns
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.085Ohm
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 19.2A, 10V
- Lead Free :
- Lead Free
- Weight :
- 6.401g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Published :
- 2000
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-3P-3, SC-65-3
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 190 ns
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 290W
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Height :
- 18.9mm
- Voltage - Rated DC :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 290W Tc
- Continuous Drain Current (ID) :
- 38.4A
- Turn-Off Delay Time :
- 170 ns
- Pbfree Code :
- yes
- Turn On Delay Time :
- 80 ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5mm
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 38.4A Tc
- Datasheets
- FQA38N30

N-Channel Tube 85m Ω @ 19.2A, 10V ±30V 4400pF @ 25V 120nC @ 10V TO-3P-3, SC-65-3
FQA38N30 Description
These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.
FQA38N30 Features
-
38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
-
Low Gate Charge (Typ. 90 nC)
-
Low Crss (Typ. 70 pF)
-
100% Avalanche Tested
-
RoHS compliant
FQA38N30 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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