FQA32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

18.9mm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

15.8mm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Rise Time :

270ns

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

200V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

Voltage - Rated DC :

200V

Mounting Type :

Through Hole

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Element Configuration :

Single

Lead Free :

Lead Free

Turn On Delay Time :

25 ns

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

82m Ω @ 16A, 10V

ECCN Code :

EAR99

Vgs (Max) :

±30V

Mount :

Through Hole

Weight :

6.401g

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Current Rating :

32A

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

JESD-609 Code :

e3

Power Dissipation-Max :

204W Tc

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

32A

Series :

QFET®

Drain-source On Resistance-Max :

0.082Ohm

Avalanche Energy Rating (Eas) :

955 mJ

Radiation Hardening :

No

Width :

5mm

Turn-Off Delay Time :

245 ns

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

204W

Fall Time (Typ) :

210 ns