FQA30N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

170 ns

Power Dissipation :

290W

Rise Time :

320ns

Voltage - Rated DC :

400V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Height :

6.35mm

Number of Pins :

3

Transistor Element Material :

SILICON

Width :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Weight :

6.401g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

140m Ω @ 15A, 10V

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

Resistance :

140mOhm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

80 ns

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

400V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Power Dissipation-Max :

290W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

JESD-609 Code :

e3

Pbfree Code :

yes

Current Rating :

30A

Element Configuration :

Single

ECCN Code :

EAR99

Continuous Drain Current (ID) :

30A

Mounting Type :

Through Hole

Radiation Hardening :

No

Published :

2013

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Lead Free :

Lead Free

Number of Elements :

1

Factory Lead Time :

10 Weeks

Length :

6.35mm

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

190 ns

Mount :

Through Hole

Transistor Application :

SWITCHING