FQA30N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Number of Pins :

3

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Height :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

140mOhm

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Turn On Delay Time :

80 ns

Current Rating :

30A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

400V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Turn-Off Delay Time :

190 ns

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mount :

Through Hole

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

FET Type :

N-Channel

Vgs (Max) :

±30V

Published :

2013

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

140m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Fall Time (Typ) :

170 ns

Length :

6.35mm

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

290W Tc

Rise Time :

320ns

Voltage - Rated DC :

400V

Weight :

6.401g

Continuous Drain Current (ID) :

30A

Pbfree Code :

yes

Width :

6.35mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

290W