FMMT415TD
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- Mfr.Part #
- FMMT415TD
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A SOT23-3
- Stock
- 2,682
- In Stock ：
- 2,682
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Base Part Number :
- FMMT415
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Length :
- 3mm
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 40MHz
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Transistor Type :
- NPN - Avalanche Mode
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 320V
- Lead Free :
- Lead Free
- Published :
- 2012
- Transition Frequency :
- 40MHz
- Number of Pins :
- 3
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Max Collector Current :
- 500mA
- Height :
- 1.1mm
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Frequency :
- 40MHz
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 330mW
- Element Configuration :
- Single
- Power Dissipation :
- 330mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 100V
- Datasheets
- FMMT415TD
NPN - Avalanche Mode -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT415TD Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 10mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
FMMT415TD Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
FMMT415TD Applications
There are a lot of Diodes Incorporated
FMMT415TD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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