FMMT413TD
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- Mfr.Part #
- FMMT413TD
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT23-3
- Stock
- 27
- In Stock ：
- 27
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Power Dissipation :
- 330mW
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Continuous Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 50V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 330mW
- Current Rating :
- 100mA
- REACH SVHC :
- No SVHC
- Base Part Number :
- FMMT413
- Length :
- 3.05mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2006
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 150MHz
- Height :
- 1mm
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 7.994566mg
- Transistor Type :
- NPN - Avalanche Mode
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity :
- NPN
- Transition Frequency :
- 150MHz
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 1mA, 10mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 150mV
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 150V
- Datasheets
- FMMT413TD
NPN - Avalanche Mode -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT413TD Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 1mA, 10mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
FMMT413TD Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 150MHz
FMMT413TD Applications
There are a lot of Diodes Incorporated
FMMT413TD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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