FMMT413TD
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- Mfr.Part #
- FMMT413TD
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT23-3
- Stock
- 27
- In Stock ：
- 27
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- FMMT413
- Mount :
- Surface Mount
- Continuous Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 150V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Height :
- 1mm
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Width :
- 1.4mm
- Voltage - Rated DC :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 150MHz
- Published :
- 2006
- Current Rating :
- 100mA
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 330mW
- Power Dissipation :
- 330mW
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 1mA, 10mA
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Collector Emitter Saturation Voltage :
- 150mV
- Transistor Type :
- NPN - Avalanche Mode
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Datasheets
- FMMT413TD
NPN - Avalanche Mode -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT413TD Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 1mA, 10mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
FMMT413TD Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 150MHz
FMMT413TD Applications
There are a lot of Diodes Incorporated
FMMT413TD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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