FMMT411FDBW-7
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- Mfr.Part #
- FMMT411FDBW-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- SS BIPOLAR TRANSISTORS W-DFN2020
- Stock
- 15,308
- In Stock ：
- 15,308
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- W-DFN2020-3 (Type A)
- Subcategory :
- Transistors
- Frequency - Transition :
- 110MHz
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-UDFN Exposed Pad
- Manufacturer :
- Diodes Incorporated
- Product Status :
- Active
- Product Category :
- Bipolar Transistors - BJT
- RoHS :
- Details
- Power - Max :
- 1.7 W
- Brand :
- Diodes Incorporated
- Current - Collector (Ic) (Max) :
- 5 A
- Series :
- -
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA, 10V
- Package :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Packaging :
- Reel
- Product Type :
- BJTs - Bipolar Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 1mA, 10mA
- Datasheets
- FMMT411FDBW-7
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) 3-UDFN Exposed Pad Reel Surface Mount
FMMT411FDBW-7 Overview
This device has a DC current gain of 100 @ 10mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 100mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Product package W-DFN2020-3 (Type A) comes from the supplier.Collector Emitter Breakdown occurs at 15 VV - Maximum voltage.
FMMT411FDBW-7 Features
the DC current gain for this device is 100 @ 10mA, 10V
the vce saturation(Max) is 100mV @ 1mA, 10mA
the supplier device package of W-DFN2020-3 (Type A)
FMMT411FDBW-7 Applications
There are a lot of Diodes Incorporated
FMMT411FDBW-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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