FMM60-02TF

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On Max :

40 mΩ

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

Input Capacitance :

3.7 nF

Factory Lead Time :

30 Weeks

JESD-30 Code :

R-PSIP-T5

Product Status :

Active

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

150 A

Current - Continuous Drain (Id) @ 25°C :

33A

Terminal Position :

Single

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Packaging :

Tube

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Base Product Number :

FMM60

Case Connection :

Isolated

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.04Ohm

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

40m Ω @ 30A, 10V

Transistor Polarity :

N-Channel

Power Dissipation-Max (Abs) :

125 W

DS Breakdown Voltage-Min :

200V

Technology :

Si

Surface Mount :

No

Supplier Device Package :

ISOPLUS i4-PAC™

Drain Current-Max (Abs) (ID) :

33 A

FET Type :

2 N-Channel (Dual)

Package / Case :

i4-Pac™-5

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Terminals :

5

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Number of Elements :

2

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

200V

Reach Compliance Code :

Compliant

Series :

HiPerFET™

Base Part Number :

FMM

FET Feature :

Standard

Pin Count :

5

Polarity/Channel Type :

N-Channel

Package :

Tube

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

125W

Power - Max :

125W

Published :

2008

Continuous Drain Current (ID) :

33A

RoHS :

Compliant

Number of Pins :

5

Avalanche Energy Rating (Eas) :

1000 mJ

Number of Terminations :

5

Manufacturer :

IXYS Corporation