FMG11AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

80

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-G5

Radiation Hardening :

No

ECCN Code :

EAR99

Polarity :

NPN

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Package / Case :

SC-74A, SOT-753

Max Output Current :

100mA

Frequency - Transition :

250MHz

Max Collector Current :

100mA

Number of Terminations :

5

Pin Count :

5

Transition Frequency :

250MHz

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current Rating :

100mA

Operating Supply Voltage :

50V

VCEsat-Max :

0.3 V

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Element Configuration :

Dual

Resistor - Base (R1) :

2.2k Ω

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

JESD-609 Code :

e1

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Published :

2001

HTS Code :

8541.21.00.75

Collector Emitter Voltage (VCEO) :

300mV

Voltage - Rated DC :

50V

Base Part Number :

*MG11

Max Power Dissipation :

300mW