FMG11AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Number of Elements :

2

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

JESD-609 Code :

e1

Max Breakdown Voltage :

50V

Transition Frequency :

250MHz

Transistor Type :

2 NPN - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Max Output Current :

100mA

VCEsat-Max :

0.3 V

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Gull wing

Package / Case :

SC-74A, SOT-753

Lead Free :

Lead Free

Base Part Number :

*MG11

Radiation Hardening :

No

Pbfree Code :

yes

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Supply Voltage :

50V

Pin Count :

5

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Frequency - Transition :

250MHz

Transistor Element Material :

SILICON

Max Operating Temperature :

150°C

Element Configuration :

Dual

Max Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G5

hFE Min :

80

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Resistor - Emitter Base (R2) :

47k Ω

Voltage - Rated DC :

50V

Resistor - Base (R1) :

2.2k Ω

Published :

2001

Current Rating :

100mA

Number of Terminations :

5

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21