FJV3113RMTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Polarity :

NPN

hFE Min :

68

Collector Base Voltage (VCBO) :

50V

Continuous Collector Current :

100mA

Width :

1.3mm

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Height :

930μm

Terminal Position :

Dual

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Base Part Number :

FJV3113

ECCN Code :

EAR99

HTS Code :

8541.21.00.95

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Terminations :

3

Current Rating :

100mA

Number of Pins :

3

Resistor - Base (R1) :

2.2 k Ω

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

10V

Voltage - Rated DC :

50V

Max Collector Current :

100mA

Element Configuration :

Single

Power Dissipation :

200mW

Lead Free :

Lead Free

Length :

2.92mm

Transistor Type :

NPN - Pre-Biased

Transition Frequency :

250MHz

Mount :

Surface Mount

Number of Elements :

1

Factory Lead Time :

2 Weeks

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Weight :

30mg

Collector Emitter Saturation Voltage :

300mV

JESD-609 Code :

e3

Published :

2013

Terminal Finish :

Tin (Sn)

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

Resistor - Emitter Base (R2) :

47 k Ω