FJV3102RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

10V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Base Part Number :

FJV3102

Resistor - Emitter Base (R2) :

10 k Ω

Transition Frequency :

250MHz

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

100mA

Radiation Hardening :

No

Number of Terminations :

3

Max Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Element Configuration :

Single

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased

Pbfree Code :

yes

Resistor - Base (R1) :

10 k Ω

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Frequency - Transition :

250MHz

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Weight :

30mg

Factory Lead Time :

14 Weeks

hFE Min :

30

Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.95

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Lead Free :

Lead Free

Current Rating :

100mA

Published :

2016

Number of Pins :

3

Number of Elements :

1

Terminal Form :

Gull wing

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Terminal Position :

Dual

Voltage - Rated DC :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA ICBO