FJV3102RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Polarity :

NPN

Resistor - Emitter Base (R2) :

10 k Ω

hFE Min :

30

Published :

2016

Current - Collector Cutoff (Max) :

100nA ICBO

Continuous Collector Current :

100mA

Power Dissipation :

200mW

Resistor - Base (R1) :

10 k Ω

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

50V

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

HTS Code :

8541.21.00.95

Transistor Type :

NPN - Pre-Biased

Terminal Finish :

Tin (Sn)

Transition Frequency :

250MHz

Min Operating Temperature :

-55°C

Number of Terminations :

3

Max Operating Temperature :

150°C

Radiation Hardening :

No

Max Power Dissipation :

200mW

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Pins :

3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Frequency - Transition :

250MHz

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

JESD-609 Code :

e3

Weight :

30mg

Base Part Number :

FJV3102

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Emitter Base Voltage (VEBO) :

10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

100mA

Terminal Position :

Dual

Element Configuration :

Single

Lead Free :

Lead Free

Max Collector Current :

100mA

Max Breakdown Voltage :

50V