FJV3103RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

100mA

Max Collector Current :

100mA

Number of Elements :

1

Number of Pins :

3

Resistor - Emitter Base (R2) :

22 k Ω

Emitter Base Voltage (VEBO) :

10V

Frequency - Transition :

250MHz

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

Weight :

30mg

HTS Code :

8541.21.00.95

Base Part Number :

FJV3103

Power Dissipation :

200mW

RoHS Status :

RoHS Compliant

Max Breakdown Voltage :

50V

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Published :

2013

JESD-609 Code :

e3

ECCN Code :

EAR99

Height :

930μm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Collector Emitter Breakdown Voltage :

50V

Width :

1.3mm

Length :

2.92mm

Number of Terminations :

3

Collector Emitter Saturation Voltage :

300mV

Max Power Dissipation :

200mW

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

50V

hFE Min :

56

Resistor - Base (R1) :

22 k Ω

Pbfree Code :

yes

Polarity :

NPN

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Terminal Position :

Dual

Transistor Type :

NPN - Pre-Biased

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1