FJV3109RMTF
- Mfr.Part #
- FJV3109RMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 200MW SOT23-3
- Stock
- 26
- In Stock :
- 26
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 40V
- Current Rating :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Frequency - Transition :
- 250MHz
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 100mA
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 200mW
- Power - Max :
- 200mW
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Transistor Type :
- NPN - Pre-Biased
- Resistor - Base (R1) :
- 4.7 kOhms
- Published :
- 2002
- Min Operating Temperature :
- -55°C
- Current - Collector (Ic) (Max) :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Datasheets
- FJV3109RMTF

FJV3109RMTF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
FJV3109RMTF Description
The ON Semiconductor FJV3109RMTF is an NPN Epitaxial Silicon Transistor with Bias Resistor
FJV3109RMTF Features
-
Built-in bias Resistor (R=4.7KΩ)
-
Complement to FJV4109R
FJV3109RMTF Applications
-
Switching circuit, Inverter, Interface circuit, Driver Circuit
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