FJPF2145TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Terminations :

3

Collector Base Voltage (VCBO) :

1.1kV

Mounting Type :

Through Hole

Length :

10.36mm

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Collector Emitter Saturation Voltage :

159mV

Packaging :

Tube

Collector Emitter Breakdown Voltage :

800V

RoHS Status :

ROHS3 Compliant

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Transition Frequency :

28.4MHz

Power Dissipation :

40W

Max Collector Current :

5A

Polarity/Channel Type :

NPN

Max Power Dissipation :

40W

Number of Elements :

1

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

2V @ 300mA, 1.5A

Collector Emitter Voltage (VCEO) :

800V

hFE Min :

20

Height :

16.07mm

Number of Pins :

3

Case Connection :

Isolated

Width :

4.9mm

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transistor Application :

SWITCHING

Weight :

2.27g

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Transistor Type :

NPN

Operating Temperature :

-55°C~125°C TJ

Emitter Base Voltage (VEBO) :

7V

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 200mA 5V

Gain Bandwidth Product :

15MHz

Series :

ESBC™