FJPF13009H2TU
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- Mfr.Part #
- FJPF13009H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220F-3
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 400V
- Lead Free :
- Lead Free
- Base Part Number :
- FJPF13009
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 4MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Weight :
- 2.27g
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- Isolated
- Current Rating :
- 12A
- Transistor Element Material :
- SILICON
- Frequency :
- 4MHz
- Published :
- 2011
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 700V
- Factory Lead Time :
- 2 Weeks
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- hFE Min :
- 6
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Radiation Hardening :
- No
- Transition Frequency :
- 4MHz
- Power Dissipation :
- 50W
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Max Collector Current :
- 12A
- Max Power Dissipation :
- 50W
- Emitter Base Voltage (VEBO) :
- 9V
- Datasheets
- FJPF13009H2TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF13009H2TU Overview
In this device, the DC current gain is 8 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 3A, 12A.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 12A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
FJPF13009H2TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJPF13009H2TU Applications
There are a lot of ON Semiconductor
FJPF13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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