FJPF13009H1TU

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Mfr.Part #
FJPF13009H1TU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack, Formed Leads
Datasheet
Download
Description
TRANS NPN 400V 12A TO220F-3
Stock
30,538
In Stock :
30,538

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
2.27g
Height :
16.07mm
Transition Frequency :
4MHz
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
Factory Lead Time :
11 Weeks
Frequency :
4MHz
Max Collector Current :
12A
Reach Compliance Code :
not_compliant
Number of Elements :
1
Max Power Dissipation :
50W
Collector Emitter Voltage (VCEO) :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 8A 5V
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-220AB
Published :
2013
Package / Case :
TO-220-3 Full Pack, Formed Leads
Base Part Number :
FJPF13009
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
9V
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Case Connection :
Isolated
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Width :
4.9mm
hFE Min :
6
Collector Emitter Breakdown Voltage :
400V
Length :
10.36mm
Transistor Element Material :
SILICON
Packaging :
Tube
Collector Emitter Saturation Voltage :
3V
Pbfree Code :
yes
Polarity/Channel Type :
NPN
Number of Pins :
3
ECCN Code :
EAR99
Gain Bandwidth Product :
4MHz
Collector Base Voltage (VCBO) :
700V
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
3V @ 3A, 12A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
50W
Mount :
Through Hole
Element Configuration :
Single
Datasheets
FJPF13009H1TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJPF13009H1TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Formed Leads, Base Part Number:FJPF13009, Number of Pins:3, FJPF13009H1TU pinout, FJPF13009H1TU datasheet PDF, FJPF13009H1TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJPF13009H1TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJPF13009H1TU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack, Formed Leads Tube Through Hole

FJPF13009H1TU Overview


This device has a DC current gain of 6 @ 8A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation (Max) of 3V @ 3A, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 12A volts is possible.

FJPF13009H1TU Features


the DC current gain for this device is 6 @ 8A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


FJPF13009H1TU Applications


There are a lot of ON Semiconductor
FJPF13009H1TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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