FJAFS1720TU
- Mfr.Part #
- FJAFS1720TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 12A TO3PF
- Stock
- 6,973
- In Stock :
- 6,973
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 26.7mm
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 250mV
- Max Power Dissipation :
- 60W
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~125°C TJ
- Number of Elements :
- 1
- Frequency :
- 15MHz
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 52 Weeks
- Collector Base Voltage (VCBO) :
- 1.7kV
- Max Collector Current :
- 12A
- Gain Bandwidth Product :
- 15MHz
- Package / Case :
- TO-3P-3 Full Pack
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8.5 @ 11A 5V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- NPN
- Series :
- ESBC™
- hFE Min :
- 8
- Current - Collector Cutoff (Max) :
- 100μA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 3.33A, 10A
- Element Configuration :
- Single
- Weight :
- 6.961991g
- Collector Emitter Breakdown Voltage :
- 800V
- Packaging :
- Tube
- Mount :
- Through Hole
- Power Dissipation :
- 60W
- Length :
- 15.7mm
- Width :
- 5.7mm
- Collector Emitter Voltage (VCEO) :
- 800V
- Radiation Hardening :
- No
- Datasheets
- FJAFS1720TU

NPN -55°C~125°C TJ 100μA 1 Elements NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1720TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 3.33A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 12A volts.
FJAFS1720TU Features
the DC current gain for this device is 8.5 @ 11A 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 3.33A, 10A
the emitter base voltage is kept at 6V
FJAFS1720TU Applications
There are a lot of ON Semiconductor
FJAFS1720TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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