FJAFS1510ATU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

60W

Collector Base Voltage (VCBO) :

1.55kV

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1.5A, 6A

Transistor Type :

NPN

Mount :

Through Hole

Number of Elements :

1

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-3P-3 Full Pack

DC Current Gain (hFE) (Min) @ Ic, Vce :

7 @ 3A 5V

Collector Emitter Saturation Voltage :

500mV

Element Configuration :

Single

Frequency - Transition :

15.4MHz

Pbfree Code :

yes

Published :

2012

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Power Dissipation :

60W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Length :

15.5mm

Collector Emitter Voltage (VCEO) :

750V

Lead Free :

Lead Free

Case Connection :

Isolated

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Breakdown Voltage :

750V

hFE Min :

15

Width :

5.5mm

Emitter Base Voltage (VEBO) :

6V

Weight :

6.962g

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Transition Frequency :

15.4MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Temperature :

-55°C~125°C TJ

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Pins :

3

Series :

ESBC™

Max Frequency :

1MHz

Max Collector Current :

6A

Height :

14.5mm