FJAFS1510ATU

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Mfr.Part #
FJAFS1510ATU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS NPN 750V 6A TO3PF
Stock
11,179
In Stock :
11,179

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Radiation Hardening :
No
Height :
14.5mm
Package / Case :
TO-3P-3 Full Pack
Max Collector Current :
6A
Max Power Dissipation :
60W
Lead Free :
Lead Free
Number of Terminations :
3
Published :
2012
Weight :
6.962g
Number of Pins :
3
hFE Min :
15
Collector Base Voltage (VCBO) :
1.55kV
Mounting Type :
Through Hole
Packaging :
Tube
Emitter Base Voltage (VEBO) :
6V
Length :
15.5mm
Transistor Type :
NPN
Factory Lead Time :
6 Weeks
Transition Frequency :
15.4MHz
Transistor Element Material :
SILICON
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1.5A, 6A
Current - Collector Cutoff (Max) :
100μA
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
7 @ 3A 5V
Power Dissipation :
60W
Case Connection :
Isolated
Collector Emitter Voltage (VCEO) :
750V
Collector Emitter Breakdown Voltage :
750V
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Max Frequency :
1MHz
Width :
5.5mm
Element Configuration :
Single
Collector Emitter Saturation Voltage :
500mV
Frequency - Transition :
15.4MHz
Operating Temperature :
-55°C~125°C TJ
RoHS Status :
RoHS Compliant
Additional Feature :
AVALANCHE RATED
Mount :
Through Hole
Series :
ESBC™
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Datasheets
FJAFS1510ATU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJAFS1510ATU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3 Full Pack, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~125°C TJ, FJAFS1510ATU pinout, FJAFS1510ATU datasheet PDF, FJAFS1510ATU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJAFS1510ATU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJAFS1510ATU


NPN -55°C~125°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole

FJAFS1510ATU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 7 @ 3A 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1.5A, 6A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 15.4MHz is present in the part.Collector current can be as low as 6A volts at its maximum.

FJAFS1510ATU Features


the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz


FJAFS1510ATU Applications


There are a lot of ON Semiconductor
FJAFS1510ATU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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