FJAFS1510ATU
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- Mfr.Part #
- FJAFS1510ATU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 750V 6A TO3PF
- Stock
- 5,400
- In Stock ：
- 5,400
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 15
- Transition Frequency :
- 15.4MHz
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- Length :
- 15.5mm
- Max Collector Current :
- 6A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~125°C TJ
- Width :
- 5.5mm
- Lead Free :
- Lead Free
- Published :
- 2012
- Power Dissipation :
- 60W
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Max Power Dissipation :
- 60W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 7 @ 3A 5V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Height :
- 14.5mm
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 750V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Package / Case :
- TO-3P-3 Full Pack
- Collector Emitter Saturation Voltage :
- 500mV
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1.5A, 6A
- Max Frequency :
- 1MHz
- Weight :
- 6.962g
- Series :
- ESBC™
- Collector Emitter Breakdown Voltage :
- 750V
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 1.55kV
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency - Transition :
- 15.4MHz
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Datasheets
- FJAFS1510ATU
NPN -55°C~125°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1510ATU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 7 @ 3A 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1.5A, 6A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 15.4MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
FJAFS1510ATU Features
the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz
FJAFS1510ATU Applications
There are a lot of ON Semiconductor
FJAFS1510ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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