FJAF6812TU

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Mfr.Part #
FJAF6812TU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS NPN 750V 12A TO3PF
Stock
1,941
In Stock :
1,941

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 8A 5V
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
1mA
Supplier Device Package :
TO-3PF
Package / Case :
TO-3P-3 Full Pack
Current - Collector (Ic) (Max) :
12A
Voltage - Collector Emitter Breakdown (Max) :
750V
Power - Max :
60W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Operating Temperature :
150°C TJ
Transistor Type :
NPN
Datasheets
FJAF6812TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJAF6812TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, Operating Temperature:150°C TJ, FJAF6812TU pinout, FJAF6812TU datasheet PDF, FJAF6812TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJAF6812TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJAF6812TU


NPN 150°C TJ 1mA TO-3P-3 Full Pack Tube Through Hole

FJAF6812TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 8A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.The product comes in the supplier device package of TO-3PF.A 750V maximal voltage - Collector Emitter Breakdown is present in the device.

FJAF6812TU Features


the DC current gain for this device is 5 @ 8A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the supplier device package of TO-3PF


FJAF6812TU Applications


There are a lot of ON Semiconductor
FJAF6812TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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