FJA4310OTU
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- Mfr.Part #
- FJA4310OTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 10A TO3P
- Stock
- 2,004
- In Stock ：
- 2,004
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 200V
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Published :
- 2008
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 140V
- Length :
- 15.8mm
- Width :
- 5mm
- Weight :
- 6.401g
- Gain Bandwidth Product :
- 30MHz
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Height :
- 20.1mm
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- hFE Min :
- 50
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Current Rating :
- 10A
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 100W
- ECCN Code :
- EAR99
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 10A
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 3A 4V
- Collector Emitter Breakdown Voltage :
- 140V
- JESD-609 Code :
- e3
- Transition Frequency :
- 30MHz
- Mount :
- Through Hole
- Packaging :
- Tube
- Number of Elements :
- 1
- Power Dissipation :
- 100W
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Frequency :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 140V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- FJA4310OTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
FJA4310OTU Overview
In this device, the DC current gain is 70 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
FJA4310OTU Features
the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4310OTU Applications
There are a lot of ON Semiconductor
FJA4310OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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