FJA4213RTU
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- Mfr.Part #
- FJA4213RTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 250V 17A TO3P
- Stock
- 2,514
- In Stock ：
- 2,514
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Power Dissipation :
- 130W
- Collector Base Voltage (VCBO) :
- -250V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 weeks ago)
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 30MHz
- Weight :
- 6.401g
- Transition Frequency :
- 30MHz
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Current Rating :
- -15A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Package / Case :
- TO-3P-3, SC-65-3
- Terminal Finish :
- Tin
- Voltage - Rated DC :
- -230V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -400mV
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 17A
- Mounting Type :
- Through Hole
- hFE Min :
- 55
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Frequency :
- 30MHz
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Packaging :
- Tube
- Max Power Dissipation :
- 130W
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 250V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 250V
- Radiation Hardening :
- No
- Datasheets
- FJA4213RTU
PNP 150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
FJA4213RTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 55 @ 1A 5V DC current gain.As it features a collector emitter saturation voltage of -400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 17A volts.
FJA4213RTU Features
the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -15A
a transition frequency of 30MHz
FJA4213RTU Applications
There are a lot of ON Semiconductor
FJA4213RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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