FJA4213RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

30MHz

Emitter Base Voltage (VEBO) :

-5V

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

17A

Gain Bandwidth Product :

30MHz

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A

Terminal Finish :

Tin

Current - Collector Cutoff (Max) :

5μA ICBO

JESD-609 Code :

e3

Weight :

6.401g

Current Rating :

-15A

Voltage - Rated DC :

-230V

Collector Emitter Voltage (VCEO) :

250V

Published :

2005

Power Dissipation :

130W

Number of Elements :

1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

250V

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Number of Pins :

3

Transition Frequency :

30MHz

Number of Terminations :

3

Factory Lead Time :

2 Weeks

Collector Base Voltage (VCBO) :

-250V

Mounting Type :

Through Hole

Max Power Dissipation :

130W

Lead Free :

Lead Free

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Transistor Type :

PNP

hFE Min :

55

Collector Emitter Saturation Voltage :

-400mV

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole