FJA4213RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-400mV

Package / Case :

TO-3P-3, SC-65-3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Type :

PNP

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

250V

ECCN Code :

EAR99

Max Collector Current :

17A

Transition Frequency :

30MHz

Packaging :

Tube

JESD-609 Code :

e3

Max Power Dissipation :

130W

Collector Base Voltage (VCBO) :

-250V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

250V

Pbfree Code :

yes

hFE Min :

55

Mounting Type :

Through Hole

Number of Terminations :

3

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

Power Dissipation :

130W

Current Rating :

-15A

Voltage - Rated DC :

-230V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

-5V

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Terminal Finish :

Tin

Element Configuration :

Single

Frequency :

30MHz

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Weight :

6.401g

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

5μA ICBO

Mount :

Through Hole

Gain Bandwidth Product :

30MHz

Transistor Application :

AMPLIFIER

Published :

2005