FJA4213OTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

130W

Current - Collector Cutoff (Max) :

5μA ICBO

ECCN Code :

EAR99

Width :

4.8mm

Factory Lead Time :

2 Weeks

Current Rating :

-15A

Number of Elements :

1

Mounting Type :

Through Hole

Element Configuration :

Single

Height :

19.9mm

hFE Min :

55

Power Dissipation :

130W

Length :

15.6mm

Emitter Base Voltage (VEBO) :

-5V

Lead Free :

Lead Free

Package / Case :

TO-3P-3, SC-65-3

Collector Emitter Voltage (VCEO) :

250V

Weight :

6.401g

Transition Frequency :

30MHz

Packaging :

Tube

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

Terminal Finish :

Tin

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A

Collector Emitter Saturation Voltage :

-400mV

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Radiation Hardening :

No

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Frequency :

30MHz

RoHS Status :

ROHS3 Compliant

Published :

2005

Collector Emitter Breakdown Voltage :

250V

Voltage - Rated DC :

-230V

Transistor Element Material :

SILICON

Gain Bandwidth Product :

30MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

-250V

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Transistor Type :

PNP

Max Collector Current :

17A

Number of Pins :

3