FDY3000NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1 V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Lead Free :

Lead Free

Element Configuration :

Dual

Turn-Off Delay Time :

8 ns

Rise Time :

8ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

700μm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

FET Type :

2 N-Channel (Dual)

Width :

1.2mm

Continuous Drain Current (ID) :

600mA

ECCN Code :

EAR99

Fall Time (Typ) :

8 ns

Pbfree Code :

yes

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Elements :

2

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Additional Feature :

ESD Protection

Resistance :

700mOhm

Power Dissipation :

625mW

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Flat

Number of Channels :

2

REACH SVHC :

No SVHC

FET Feature :

Logic Level Gate

Threshold Voltage :

1V

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Published :

2007

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Series :

PowerTrench®

Turn On Delay Time :

6 ns

Weight :

32mg

Package / Case :

SOT-563, SOT-666

Length :

1.6mm

Power - Max :

446mW

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

625mW

Dual Supply Voltage :

20V

Number of Terminations :

6