FDT461N

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Mfr.Part #
FDT461N
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 540MA SOT223-4
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
PowerTrench®
Number of Terminations :
4
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
2 Ω @ 540mA, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
540mA Ta
DS Breakdown Voltage-Min :
100V
Input Capacitance (Ciss) (Max) @ Vds :
74pF @ 25V
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
0.54A
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
JESD-30 Code :
R-PDSO-G4
Terminal Finish :
MATTE TIN
Vgs(th) (Max) @ Id :
2V @ 250μA
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-261-4, TO-261AA
Qualification Status :
COMMERCIAL
Drain to Source Voltage (Vdss) :
100V
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Power Dissipation-Max :
1.13W Ta
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 10V
Pbfree Code :
yes
Drain-source On Resistance-Max :
2Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Pin Count :
4
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
6.3 mJ
Datasheets
FDT461N
Introducing Transistors - FETs, MOSFETs - Single onsemi FDT461N from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDT461N pinout, FDT461N datasheet PDF, FDT461N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDT461N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDT461N


N-Channel Tape & Reel (TR) 2 Ω @ 540mA, 10V ±20V 74pF @ 25V 4nC @ 10V 100V TO-261-4, TO-261AA

FDT461N Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 6.3 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 74pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [0.54A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDT461N Features


the avalanche energy rating (Eas) is 6.3 mJ
a 100V drain to source voltage (Vdss)


FDT461N Applications


There are a lot of Rochester Electronics, LLC
FDT461N applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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