FDT459N
- Mfr.Part #
- FDT459N
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- 6.5A, 30V, 0.035OHM, N-CHANNEL,
- Stock
- 32,958
- In Stock :
- 32,958
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- JESD-30 Code :
- R-PDSO-G4
- Fall Time (Typ) :
- 16 ns
- Terminal Finish :
- Tin (Sn)
- Width :
- 3.7mm
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 6 ns
- Weight :
- 250.2mg
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Lifecycle Status :
- LIFETIME (Last Updated: 11 hours ago)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 365pF @ 15V
- Turn On Delay Time :
- 5.2 ns
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 6.5A
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6.5A, 10V
- Rise Time :
- 8.2ns
- Terminal Form :
- Gull wing
- Power Dissipation :
- 3W
- Pulsed Drain Current-Max (IDM) :
- 20A
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.7mm
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Length :
- 6.7mm
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 3W Ta
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Published :
- 1998
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Continuous Drain Current (ID) :
- 6.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 30V
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Datasheets
- FDT459N
FDT459N Documents

N-Channel Tape & Reel (TR) 35m Ω @ 6.5A, 10V ±20V 365pF @ 15V 17nC @ 10V TO-261-4, TO-261AA
FDT459N Description
FDT459N belongs to the family of N-channel enhancement-mode field-effect transistors manufactured by ON Semiconductor based on the proprietary, high cell density, DMOS technology for low on-state resistance and advanced switching performance. Based on its high quality and reliable performance, it is well suited for low-voltage, low-current applications.
FDT459N Features
-
Low gate charge
-
Low on-state resistance
-
Improved dv/dt capability
-
Advanced switching performance
-
Available in the SOT-223 package
FDT459N Applications
-
DC motor control
-
Power management
-
Battery-powered circuits
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