FDT439N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.8mm

Nominal Vgs :

670 mV

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

45m Ω @ 6.3A, 4.5V

Turn-Off Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Dual Supply Voltage :

30V

Pbfree Code :

yes

Mount :

Surface Mount

Case Connection :

DRAIN

Terminal Form :

Gull wing

Termination :

SMD/SMT

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Weight :

250.2mg

Continuous Drain Current (ID) :

6.3A

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Max Junction Temperature (Tj) :

150°C

Rise Time :

10ns

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Length :

6.5mm

Power Dissipation-Max :

3W Ta

Package / Case :

TO-261-4, TO-261AA

Voltage - Rated DC :

30V

Turn On Delay Time :

6 ns

Fall Time (Typ) :

10 ns

Number of Pins :

4

Vgs(th) (Max) @ Id :

1V @ 250μA

Pulsed Drain Current-Max (IDM) :

20A

Number of Channels :

1

Contact Plating :

Tin

REACH SVHC :

No SVHC

Width :

3.56mm

Published :

1999

ECCN Code :

EAR99

Number of Elements :

1

Threshold Voltage :

670mV

Transistor Application :

SWITCHING

Resistance :

45mOhm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current Rating :

6.3A

Vgs (Max) :

±8V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Power Dissipation :

3W

Number of Terminations :

4

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ