FDT459N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rise Time :

8.2ns

Lifecycle Status :

LIFETIME (Last Updated: 11 hours ago)

Length :

6.7mm

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

16 ns

Power Dissipation-Max :

3W Ta

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

20A

JESD-30 Code :

R-PDSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 15V

Element Configuration :

Single

Mount :

Surface Mount

Continuous Drain Current (ID) :

6.5A

Number of Terminations :

4

Pbfree Code :

yes

Height :

1.7mm

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

5.2 ns

Drain to Source Breakdown Voltage :

30V

Weight :

250.2mg

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Width :

3.7mm

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Power Dissipation :

3W

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.5A, 10V

Turn-Off Delay Time :

6 ns

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Case Connection :

DRAIN

Published :

1998

Operating Mode :

ENHANCEMENT MODE

Current Rating :

6.5A

Voltage - Rated DC :

30V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ