FDSS2407

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Mfr.Part #
FDSS2407
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 62V 3.3A 8SOIC
Stock
11,253
In Stock :
11,253

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Drain to Source Voltage (Vdss) :
62V
Width :
3.9mm
Drain Current-Max (Abs) (ID) :
3A
Mount :
Surface Mount
Series :
Automotive, AEC-Q101, PowerTrench®
Turn-Off Delay Time :
8.7 μs
Base Part Number :
FDSS2407
Terminal Form :
Gull wing
Rise Time :
1.2μs
Element Configuration :
Dual
Length :
4.9mm
Packaging :
Tape and Reel (TR)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Weight :
230.4mg
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.11Ohm
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
110m Ω @ 3.3A, 10V
Number of Pins :
8
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
2.27W
RoHS Status :
ROHS3 Compliant
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
Logic Level Gate
Terminal Finish :
Tin (Sn)
Avalanche Energy Rating (Eas) :
140 mJ
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 15V
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
62V
FET Type :
2 N-Channel (Dual)
Gate to Source Voltage (Vgs) :
20V
Published :
2004
Number of Terminations :
8
Turn On Delay Time :
630 ns
Fall Time (Typ) :
3.5 μs
Gate Charge (Qg) (Max) @ Vgs :
4.3nC @ 5V
Number of Elements :
2
Radiation Hardening :
No
Height :
1.575mm
Max Power Dissipation :
2.27W
Factory Lead Time :
5 Weeks
Continuous Drain Current (ID) :
3.3A
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDSS2407 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:FDSS2407, Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, FDSS2407 pinout, FDSS2407 datasheet PDF, FDSS2407 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDSS2407 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDSS2407


FDSS2407 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDSS2407           Description


  Compared with the traditional power MOSFET, this dual N-channel MOSFET provides additional functions. They are Drain-to-source voltage feedback signal, and   Two . Previously, the gate driver of the external discrete circuit was required to disable the control function.

Including these features in MOSFET saves space on printed circuit boards. As long as the drain-to-source voltage is higher than 62V, the drain-to-source voltage feedback function can provide 5V level output. This can monitor the time it takes for a perceptual load to deplete its stored energy. A plurality of feedback signals can be connected to one input of the monitoring circuit.

The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function allows the second control circuit to deactivate the load if necessary. It can also be connected to "OR", allowing multiple devices to be controlled by a single open collector / drain control transistor.

 

FDSS2407          Features

 

62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8

5V Logic Level feedback signal of the drain to sourcevoltage

Multiple devices can be wired "OR'd" to a single monitoring circuit input

Gate Drive Disable Input

Multiple devices controllable bya single disable transistor

Qualified to AEC Q101


FDSS2407               Applications


Power Train

Automotive Injector Driver

Solenoid Driver

 



 




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