FDSS2407
- Mfr.Part #
- FDSS2407
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 62V 3.3A 8SOIC
- Stock
- 11,253
- In Stock :
- 11,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 4.3nC @ 5V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Base Part Number :
- FDSS2407
- Drain-source On Resistance-Max :
- 0.11Ohm
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Published :
- 2004
- Transistor Element Material :
- SILICON
- Weight :
- 230.4mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 15V
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 630 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.27W
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 3.5 μs
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.575mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Max Power Dissipation :
- 2.27W
- Turn-Off Delay Time :
- 8.7 μs
- Number of Terminations :
- 8
- Number of Elements :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 3.3A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 5 Weeks
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 3.3A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 3.9mm
- Drain to Source Voltage (Vdss) :
- 62V
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 62V
- Drain Current-Max (Abs) (ID) :
- 3A
- Length :
- 4.9mm
- Rise Time :
- 1.2μs
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Radiation Hardening :
- No
- Datasheets
- FDSS2407

FDSS2407 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDSS2407 Description
Compared with the traditional power MOSFET, this dual N-channel MOSFET provides additional functions. They are Drain-to-source voltage feedback signal, and Two . Previously, the gate driver of the external discrete circuit was required to disable the control function.
Including these features in MOSFET saves space on printed circuit boards. As long as the drain-to-source voltage is higher than 62V, the drain-to-source voltage feedback function can provide 5V level output. This can monitor the time it takes for a perceptual load to deplete its stored energy. A plurality of feedback signals can be connected to one input of the monitoring circuit.
The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function allows the second control circuit to deactivate the load if necessary. It can also be connected to "OR", allowing multiple devices to be controlled by a single open collector / drain control transistor.
FDSS2407 Features
62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8
5V Logic Level feedback signal of the drain to sourcevoltage
Multiple devices can be wired "OR'd" to a single monitoring circuit input
Gate Drive Disable Input
Multiple devices controllable bya single disable transistor
Qualified to AEC Q101
FDSS2407 Applications
Power Train
Automotive Injector Driver
Solenoid Driver
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