FDS7779Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

DS Breakdown Voltage-Min :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

COMMERCIAL

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Number of Terminations :

8

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

50A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 16A, 10V

Drain Current-Max (Abs) (ID) :

16A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Series :

PowerTrench®

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0072Ohm

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Number of Elements :

1

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

3.8pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

16A Ta