FDS7082N3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

17.5A Ta

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2.271pF @ 15V

Pin Count :

8

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e4

Drain-source On Resistance-Max :

0.006Ohm

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

6m Ω @ 17.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

NICKEL PALLADIUM GOLD

Series :

PowerTrench®

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3W Ta

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

17.5A

Case Connection :

DRAIN

Vgs (Max) :

±20V

Terminal Form :

Gull wing