FDS7060N7

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Mfr.Part #
FDS7060N7
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 19A 8SO
Stock
49,173
In Stock :
49,173

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.005ohm
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 5V
Terminal Form :
Gull wing
Power Dissipation-Max :
3W Ta
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drain to Source Voltage (Vdss) :
30V
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
5m Ω @ 19A, 10V
Transistor Application :
SWITCHING
Series :
PowerTrench®
Input Capacitance (Ciss) (Max) @ Vds :
3.274pF @ 15V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
8
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
8
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
19A
JESD-609 Code :
e4
Surface Mount :
yes
JESD-30 Code :
R-PDSO-G8
DS Breakdown Voltage-Min :
30V
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Dual
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
19A Ta
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
60A
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
360 mJ
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Finish :
NICKEL PALLADIUM GOLD
Datasheets
FDS7060N7
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS7060N7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS7060N7 pinout, FDS7060N7 datasheet PDF, FDS7060N7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS7060N7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS7060N7


N-Channel Tape & Reel (TR) 5m Ω @ 19A, 10V ±20V 3.274pF @ 15V 56nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

FDS7060N7 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.274pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 19A.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

FDS7060N7 Features


the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)


FDS7060N7 Applications


There are a lot of Rochester Electronics, LLC
FDS7060N7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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