FDS7060N7
- Mfr.Part #
- FDS7060N7
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A 8SO
- Stock
- 8,663
- In Stock :
- 8,663
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 5V
- Surface Mount :
- yes
- Number of Terminations :
- 8
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.274pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 30V
- Power Dissipation-Max :
- 3W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 19A, 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Pin Count :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- JESD-609 Code :
- e4
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 60A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 19A
- Mounting Type :
- Surface Mount
- Qualification Status :
- COMMERCIAL
- Drain-source On Resistance-Max :
- 0.005ohm
- Datasheets
- FDS7060N7

N-Channel Tape & Reel (TR) 5m Ω @ 19A, 10V ±20V 3.274pF @ 15V 56nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS7060N7 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.274pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 19A.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDS7060N7 Features
the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7060N7 Applications
There are a lot of Rochester Electronics, LLC
FDS7060N7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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