FDS6986AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Weight :

187mg

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.5A 7.9A

Continuous Drain Current (ID) :

7.9mA

Rds On (Max) @ Id, Vgs :

29m Ω @ 6.5A, 10V

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Voltage - Rated DC :

30V

Radiation Hardening :

No

Lead Free :

Lead Free

Published :

2005

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Height :

1.5mm

Fall Time (Typ) :

3 ns

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

24 ns

Transistor Element Material :

SILICON

Number of Elements :

2

Mounting Type :

Surface Mount

Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Max Power Dissipation :

900mW

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Number of Pins :

8

Length :

5mm

Series :

PowerTrench®, SyncFET™

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

18 Weeks

Current Rating :

7.9A

RoHS Status :

ROHS3 Compliant

Width :

3.99mm

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Rise Time :

9ns

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Resistance :

29mOhm

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 10V

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

6.5A

Threshold Voltage :

1.7V

Operating Mode :

ENHANCEMENT MODE