FDS6961A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

5mm

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.8V

RoHS Status :

ROHS3 Compliant

Power - Max :

900mW

Pbfree Code :

yes

Mount :

Surface Mount

Power Dissipation :

2W

Current Rating :

3.5A

Width :

4mm

Fall Time (Typ) :

3 ns

Mounting Type :

Surface Mount

Rise Time :

11ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

230.4mg

FET Feature :

Logic Level Gate

Nominal Vgs :

1.8 V

FET Type :

2 N-Channel (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

7 ns

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.5A, 10V

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Number of Elements :

2

Continuous Drain Current (ID) :

3.5A

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Lead Free :

Lead Free

Series :

PowerTrench®

Published :

2017

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Terminal Form :

Gull wing

Turn On Delay Time :

3 ns

Number of Pins :

8

Factory Lead Time :

10 Weeks

Height :

1.5mm

ECCN Code :

EAR99

Resistance :

90mOhm

JESD-609 Code :

e3