FDS6930B

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Mfr.Part #
FDS6930B
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 30V 5.5A 8SOIC
Stock
4,948
In Stock :
4,948

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Fall Time (Typ) :
2 ns
Lead Free :
Lead Free
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
412pF @ 15V
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Current Rating :
5.5A
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
FET Feature :
Logic Level Gate
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Pbfree Code :
yes
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Resistance :
38mOhm
Packaging :
Tape and Reel (TR)
Number of Elements :
2
ECCN Code :
EAR99
FET Type :
2 N-Channel (Dual)
Number of Pins :
8
Published :
2010
Feedback Cap-Max (Crss) :
60 pF
Number of Terminations :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
38m Ω @ 5.5A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Voltage - Rated DC :
30V
Max Power Dissipation :
2W
Width :
4mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
5mm
Turn-Off Delay Time :
16 ns
Nominal Vgs :
1.9 V
Drain to Source Breakdown Voltage :
30V
RoHS Status :
ROHS3 Compliant
Rise Time :
6ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
1.9V
Power Dissipation :
2W
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Voltage :
30V
JESD-609 Code :
e3
Power - Max :
900mW
Continuous Drain Current (ID) :
5.5A
Turn On Delay Time :
6 ns
Factory Lead Time :
10 Weeks
Gate Charge (Qg) (Max) @ Vgs :
3.8nC @ 5V
Height :
1.5mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Series :
PowerTrench®
Current :
55A
Datasheets
FDS6930B
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDS6930B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Number of Terminations:8, Voltage:30V, FDS6930B pinout, FDS6930B datasheet PDF, FDS6930B amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDS6930B ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6930B


FDS6930B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS6930B   Description

 

These N-channel logic level MOSFET are produced using advanced power channel semiconductor processes, and in particular are considered to reduce on-resistance and maintain excellent switching performance.

These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.


FDS6930B    Features


5.5A,30 V.RDS(ON)=38mΩ @VGs=10V

Rps(ON)=50mΩ@VGs=4.5V

Fast switching speed Low gate charge

High performance trench techinologyfor extremely lowRDS(ON)

High power and current handling capability

 

 FDS6930B       Applications


low-voltage and battery-powered applications

 

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