FDS6930B
- Mfr.Part #
- FDS6930B
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 5.5A 8SOIC
- Stock
- 4,948
- In Stock :
- 4,948
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Fall Time (Typ) :
- 2 ns
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 412pF @ 15V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 5.5A
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- FET Feature :
- Logic Level Gate
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Resistance :
- 38mOhm
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- ECCN Code :
- EAR99
- FET Type :
- 2 N-Channel (Dual)
- Number of Pins :
- 8
- Published :
- 2010
- Feedback Cap-Max (Crss) :
- 60 pF
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 5.5A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Voltage - Rated DC :
- 30V
- Max Power Dissipation :
- 2W
- Width :
- 4mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 5mm
- Turn-Off Delay Time :
- 16 ns
- Nominal Vgs :
- 1.9 V
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 6ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 1.9V
- Power Dissipation :
- 2W
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Voltage :
- 30V
- JESD-609 Code :
- e3
- Power - Max :
- 900mW
- Continuous Drain Current (ID) :
- 5.5A
- Turn On Delay Time :
- 6 ns
- Factory Lead Time :
- 10 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 3.8nC @ 5V
- Height :
- 1.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Series :
- PowerTrench®
- Current :
- 55A
- Datasheets
- FDS6930B

FDS6930B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6930B Description
These N-channel logic level MOSFET are produced using advanced power channel semiconductor processes, and in particular are considered to reduce on-resistance and maintain excellent switching performance.
These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930B Features
5.5A,30 V.RDS(ON)=38mΩ @VGs=10V
Rps(ON)=50mΩ@VGs=4.5V
Fast switching speed Low gate charge
High performance trench techinologyfor extremely lowRDS(ON)
High power and current handling capability
FDS6930B Applications
low-voltage and battery-powered applications
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