FDS6898AZ
- Mfr.Part #
- FDS6898AZ
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 9.4A 8SOIC
- Stock
- 8,300
- In Stock :
- 8,300
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 34 ns
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 14mOhm
- Nominal Vgs :
- 1 V
- Additional Feature :
- ESD PROTECTED
- Number of Pins :
- 8
- Length :
- 5mm
- Dual Supply Voltage :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 15ns
- Packaging :
- Tape and Reel (TR)
- Width :
- 4mm
- Mounting Type :
- Surface Mount
- Weight :
- 187mg
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 16 ns
- Contact Plating :
- Tin
- FET Type :
- 2 N-Channel (Dual)
- Termination :
- SMD/SMT
- Factory Lead Time :
- 10 Weeks
- Voltage - Rated DC :
- 20V
- Number of Terminations :
- 8
- Power Dissipation :
- 2W
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 12V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1821pF @ 10V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 900mW
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 9.4A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 4.5V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Height :
- 1.5mm
- Threshold Voltage :
- 1V
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- Logic Level Gate
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Element Configuration :
- Dual
- Current Rating :
- 9.4A
- Number of Elements :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 9.4A
- Max Power Dissipation :
- 2W
- Datasheets
- FDS6898AZ

FDS6898AZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6898AZ Description
These N-channel logic level MOSFET use Fairchild Semiconductor's advanced Powerlrannch process tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6898AZ Features
·9.4A20 V Ros(ON)=14mΩ@Vgs=4.5V
Rps(on)=18mΩ@Vgs=2.5V
·Low gate charge(16 nC typical)
.ESD protection diode(note 3)
.High performance trench technology for extremely low RosON)
High power and current handling capability
FDS6898AZ Applications
low-voltage applications
battery-powered applications
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