FDS6875

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Pbfree Code :

yes

Current Rating :

-6A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

10 Weeks

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Element Configuration :

Dual

Number of Terminations :

8

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Power Dissipation :

2W

Threshold Voltage :

-800mV

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Length :

5mm

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

6A

JESD-609 Code :

e3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 4.5V

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

98 ns

Operating Temperature :

-55°C~150°C TJ

Width :

4mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Resistance :

30mOhm

Power - Max :

900mW

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

-6A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

FET Type :

2 P-Channel (Dual)

Rise Time :

15ns

Turn On Delay Time :

8 ns

Weight :

187mg

Height :

1.5mm

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

35 ns