FDPF8N50NZU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

27 ns

Transistor Application :

SWITCHING

Weight :

2.27g

Pulsed Drain Current-Max (IDM) :

26A

Published :

2013

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 4A, 10V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

40W Tc

Packaging :

Tube

Power Dissipation :

40W

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 25V

Vgs (Max) :

±25V

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

FET Type :

N-Channel

Rise Time :

34ns

Avalanche Energy Rating (Eas) :

80 mJ

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Transistor Element Material :

SILICON

Turn-Off Delay Time :

43 ns

Gate to Source Voltage (Vgs) :

25V

Height :

15.87mm

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

6.5A

Length :

10.16mm

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.7mm

Number of Pins :

3

Turn On Delay Time :

17 ns

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Series :

UniFET-II™

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Temperature :

-55°C~150°C TJ