FDPF045N10A
- Mfr.Part #
- FDPF045N10A
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 67A TO220F
- Stock
- 495
- In Stock :
- 495
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.36mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5270pF @ 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 67A, 10V
- Element Configuration :
- Single
- Packaging :
- Tube
- Turn On Delay Time :
- 23 ns
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 50 ns
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 67A
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Number of Terminations :
- 3
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Weight :
- 2.27g
- Width :
- 4.9mm
- Fall Time (Typ) :
- 15 ns
- Power Dissipation :
- 43W
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 268A
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Rise Time :
- 26ns
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 10V
- Power Dissipation-Max :
- 43W Tc
- Height :
- 16.07mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2011
- Package / Case :
- TO-220-3 Full Pack
- Drain-source On Resistance-Max :
- 0.0045ohm
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Datasheets
- FDPF045N10A

N-Channel Tube 4.5m Ω @ 67A, 10V ±20V 5270pF @ 50V 74nC @ 10V TO-220-3 Full Pack
FDPF045N10A Description
The FDPF045N10A N-Channel MOSFET is produced using advance PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.
FDPF045N10A Features
-
Fast Switching Speed
-
Low Gate Charge, QG = 57 nC (Typ.)
-
High Performance Trench Technology for Extremely Low RDs(on)
-
High Power and Current Handling Capability
-
RoHS Compliant
-
Lead Free
FDPF045N10A Applications
-
Synchronous Rectification for ATX / Server / Telecom PSU
-
Motor drives and Uninterruptible Power Supplies
-
Micro Solar Inverter
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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