FDPF10N50UT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

8A

Width :

4.9mm

Radiation Hardening :

No

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 4A, 10V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 25V

Vgs (Max) :

±30V

Power Dissipation :

42W

Published :

2013

Rise Time :

38ns

Fall Time (Typ) :

33 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

UniFET™

Height :

16.07mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

42W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

46 ns

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

2.27g

Mounting Type :

Through Hole

Factory Lead Time :

6 Weeks

Number of Terminations :

3

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

8A

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Length :

10.36mm

Packaging :

Tube